2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
2SJ360(TE12L,F)
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RFQ
14,820
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Toshiba Semiconductor and Storage MOSFET P-CH 60V 1A SC-62 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-243AA PW-MINI 500mW (Ta) P-Channel 60V 1A (Ta) 730 mOhm @ 500mA, 10V 2V @ 1mA 6.5nC @ 10V 155pF @ 10V 4V, 10V ±20V
2SJ360(F)
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RFQ
36,260
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Toshiba Semiconductor and Storage MOSFET P-CH 60V 1A SC-62 - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-243AA PW-MINI 500mW (Ta) P-Channel 60V 1A (Ta) 730 mOhm @ 500mA, 10V 2V @ 1mA 6.5nC @ 10V 155pF @ 10V 4V, 10V ±20V
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