- Packaging :
- Operating Temperature :
- Package / Case :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
12 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
39,220
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 1.4A CST3 | U-MOSVII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-101, SOT-883 | CST3 | 500mW (Ta) | N-Channel | - | 20V | 1.4A (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | ||
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15,100
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 1.4A CST3 | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-101, SOT-883 | CST3 | 500mW (Ta) | N-Channel | - | 20V | 1.4A (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | |||
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21,180
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 1.4A CST3 | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-101, SOT-883 | CST3 | 500mW (Ta) | N-Channel | - | 20V | 1.4A (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | |||
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GET PRICE |
63,060
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 0.8A SSM | U-MOSVII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM | 150mW (Ta) | N-Channel | - | 20V | 800mA (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | ||
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62,720
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 0.8A SSM | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM | 150mW (Ta) | N-Channel | - | 20V | 800mA (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | |||
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19,760
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 0.8A SSM | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM | 150mW (Ta) | N-Channel | - | 20V | 800mA (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | |||
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GET PRICE |
48,880
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|
Toshiba Semiconductor and Storage | MOSFET NCH 20V 800MA CST3 | U-MOSVII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | 3-XFDFN | CST3 | 500mW (Ta) | N-Channel | - | 20V | 800mA (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | ||
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58,340
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET NCH 20V 800MA CST3 | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | 3-XFDFN | CST3 | 500mW (Ta) | N-Channel | - | 20V | 800mA (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | |||
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74,660
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET NCH 20V 800MA CST3 | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | 3-XFDFN | CST3 | 500mW (Ta) | N-Channel | - | 20V | 800mA (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | |||
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|
GET PRICE |
79,840
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 0.8A VESM | U-MOSVII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-723 | VESM | 150mW (Ta) | N-Channel | - | 20V | 800mA (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | ||
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38,580
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 0.8A VESM | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-723 | VESM | 150mW (Ta) | N-Channel | - | 20V | 800mA (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | |||
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15,240
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 0.8A VESM | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-723 | VESM | 150mW (Ta) | N-Channel | - | 20V | 800mA (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V |
