- Part Status :
- Packaging :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
52,860
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 4A TSM | - | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | 30V | 4A (Ta) | 53 mOhm @ 3A, 10V | 1V @ 1mA | 4.3nC @ 4V | 270pF @ 10V | 1.8V, 10V | ±12V | ||
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GET PRICE |
71,760
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 4A TSM | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | 30V | 4A (Ta) | 53 mOhm @ 3A, 10V | 1V @ 1mA | 4.3nC @ 4V | 270pF @ 10V | 1.8V, 10V | ±12V | ||
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GET PRICE |
35,380
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 4A TSM | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | 30V | 4A (Ta) | 53 mOhm @ 3A, 10V | 1V @ 1mA | 4.3nC @ 4V | 270pF @ 10V | 1.8V, 10V | ±12V | ||
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GET PRICE |
65,680
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 20V 6A SOT23 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3L | 1.4W (Ta) | N-Channel | 20V | 6A (Ta) | 24 mOhm @ 6A, 10V | 1V @ 1mA | 8.8nC @ 4.5V | 630pF @ 10V | 1.8V, 10V | ±12V | ||
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|
61,900
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 20V 6A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3L | 1.4W (Ta) | N-Channel | 20V | 6A (Ta) | 24 mOhm @ 6A, 10V | 1V @ 1mA | 8.8nC @ 4.5V | 630pF @ 10V | 1.8V, 10V | ±12V | |||
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|
43,840
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 20V 6A SOT23 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3L | 1.4W (Ta) | N-Channel | 20V | 6A (Ta) | 24 mOhm @ 6A, 10V | 1V @ 1mA | 8.8nC @ 4.5V | 630pF @ 10V | 1.8V, 10V | ±12V |
