- Packaging :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
19,620
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 2.3A ES6 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | N-Channel | 30V | 2.3A (Ta) | 85 mOhm @ 1.5A, 4V | 1V @ 1mA | 270pF @ 10V | 1.8V, 4V | ±12V | ||
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43,940
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 2.3A ES6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | N-Channel | 30V | 2.3A (Ta) | 85 mOhm @ 1.5A, 4V | 1V @ 1mA | 270pF @ 10V | 1.8V, 4V | ±12V | |||
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78,580
One step to sell excess stocks.Or submit Qty to get quotes
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 2.3A ES6 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | N-Channel | 30V | 2.3A (Ta) | 85 mOhm @ 1.5A, 4V | 1V @ 1mA | 270pF @ 10V | 1.8V, 4V | ±12V |
