- Packaging :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
28,800
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 4.2A | U-MOSIII | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | UF6 | 500mW (Ta) | N-Channel | - | 20V | 4.2A (Ta) | 28 mOhm @ 3A, 4V | 1V @ 1mA | 16.8nC @ 4V | 1050pF @ 10V | 1.5V, 4V | ±10V | ||
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38,800
One step to sell excess stocks.Or submit Qty to get quotes
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 4.2A | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | UF6 | 500mW (Ta) | N-Channel | - | 20V | 4.2A (Ta) | 28 mOhm @ 3A, 4V | 1V @ 1mA | 16.8nC @ 4V | 1050pF @ 10V | 1.5V, 4V | ±10V | |||
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61,440
One step to sell excess stocks.Or submit Qty to get quotes
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 4.2A | U-MOSIII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | UF6 | 500mW (Ta) | N-Channel | - | 20V | 4.2A (Ta) | 28 mOhm @ 3A, 4V | 1V @ 1mA | 16.8nC @ 4V | 1050pF @ 10V | 1.5V, 4V | ±10V |
