4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TPC6011(TE85L,F,M)
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RFQ
22,420
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 6A VS6 U-MOSIV Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 VS-6 (2.9x2.8) 700mW (Ta) N-Channel - 30V 6A (Ta) 20 mOhm @ 3A, 10V 2.5V @ 1mA 14nC @ 10V 640pF @ 10V 4.5V, 10V ±20V
SSM3K315T(TE85L,F)
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RFQ
58,520
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 6A TSM U-MOSIV Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TSM 700mW (Ta) N-Channel - 30V 6A (Ta) 27.6 mOhm @ 4A, 10V 2.5V @ 1mA 10.1nC @ 10V 450pF @ 15V 4.5V, 10V ±20V
SSM3K315T(TE85L,F)
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RFQ
27,500
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 6A TSM U-MOSIV Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TSM 700mW (Ta) N-Channel - 30V 6A (Ta) 27.6 mOhm @ 4A, 10V 2.5V @ 1mA 10.1nC @ 10V 450pF @ 15V 4.5V, 10V ±20V
SSM3K315T(TE85L,F)
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RFQ
21,860
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 6A TSM U-MOSIV Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TSM 700mW (Ta) N-Channel - 30V 6A (Ta) 27.6 mOhm @ 4A, 10V 2.5V @ 1mA 10.1nC @ 10V 450pF @ 15V 4.5V, 10V ±20V
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