- Packaging :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
68,480
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 18A 8-SOP | U-MOSIV | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | 1W (Ta) | N-Channel | - | 30V | 18A (Ta) | 3.4 mOhm @ 9A, 10V | 2.5V @ 1mA | 56nC @ 10V | 2900pF @ 10V | 4.5V, 10V | ±20V | ||
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GET PRICE |
25,100
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 18A 8-SOP | U-MOSIV | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | 1W (Ta) | N-Channel | - | 30V | 18A (Ta) | 3.4 mOhm @ 9A, 10V | 2.5V @ 1mA | 56nC @ 10V | 2900pF @ 10V | 4.5V, 10V | ±20V | ||
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GET PRICE |
66,820
One step to sell excess stocks.Or submit Qty to get quotes
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 18A 8-SOP | U-MOSIV | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | 1W (Ta) | N-Channel | - | 30V | 18A (Ta) | 3.4 mOhm @ 9A, 10V | 2.5V @ 1mA | 56nC @ 10V | 2900pF @ 10V | 4.5V, 10V | ±20V |
