Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PHP71NQ03LT,127
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RFQ
57,800
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NXP USA Inc. MOSFET N-CH 30V 75A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 120W (Tc) N-Channel - 30V 75A (Tc) 10 mOhm @ 25A, 10V 2.5V @ 1mA 13.2nC @ 5V 1220pF @ 25V 5V, 10V ±20V
PHP63NQ03LT,127
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RFQ
57,240
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NXP USA Inc. MOSFET N-CH 30V 68.9A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 111W (Tc) N-Channel - 30V 68.9A (Tc) 13 mOhm @ 25A, 10V 2.5V @ 1mA 9.6nC @ 5V 920pF @ 25V 5V, 10V ±20V
PHU101NQ03LT,127
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RFQ
68,680
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NXP USA Inc. MOSFET N-CH 30V 75A SOT533 TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 166W (Tc) N-Channel - 30V 75A (Tc) 5.5 mOhm @ 25A, 10V 2.5V @ 1mA 23nC @ 5V 2180pF @ 25V 5V, 10V ±20V
PHP101NQ03LT,127
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RFQ
28,340
One step to sell excess stocks.Or submit Qty to get quotes
NXP USA Inc. MOSFET N-CH 30V 75A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 166W (Tc) N-Channel - 30V 75A (Tc) 5.5 mOhm @ 25A, 10V 2.5V @ 1mA 23nC @ 5V 2180pF @ 25V 5V, 10V ±20V
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