- Part Status :
- Packaging :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
12 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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73,540
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|
EPC | TRANS GAN 60V 60A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | 60V | 60A (Ta) | 2.2 mOhm @ 31A, 5V | 2.5V @ 16mA | 16nC @ 5V | 1800pF @ 30V | 5V | +6V, -4V | ||
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GET PRICE |
45,500
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|
EPC | TRANS GAN 60V 60A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | 60V | 60A (Ta) | 2.2 mOhm @ 31A, 5V | 2.5V @ 16mA | 16nC @ 5V | 1800pF @ 30V | 5V | +6V, -4V | ||
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GET PRICE |
37,240
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|
EPC | TRANS GAN 60V 60A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | 60V | 60A (Ta) | 2.2 mOhm @ 31A, 5V | 2.5V @ 16mA | 16nC @ 5V | 1800pF @ 30V | 5V | +6V, -4V | ||
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GET PRICE |
58,620
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|
EPC | TRANS GAN 60V 90A BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | 60V | 90A (Ta) | 2.2 mOhm @ 31A, 5V | 2.5V @ 16mA | 16nC @ 5V | 1780pF @ 30V | 5V | +6V, -4V | ||
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46,740
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|
EPC | TRANS GAN 60V 90A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | 60V | 90A (Ta) | 2.2 mOhm @ 31A, 5V | 2.5V @ 16mA | 16nC @ 5V | 1780pF @ 30V | 5V | +6V, -4V | |||
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65,080
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|
EPC | TRANS GAN 60V 90A BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | 60V | 90A (Ta) | 2.2 mOhm @ 31A, 5V | 2.5V @ 16mA | 16nC @ 5V | 1780pF @ 30V | 5V | +6V, -4V | |||
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GET PRICE |
68,920
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|
EPC | MOSFET NCH 40V 31A DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | 40V | 31A (Ta) | 2.4 mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | 1900pF @ 20V | 5V | +6V, -4V | ||
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68,480
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|
EPC | MOSFET NCH 40V 31A DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | 40V | 31A (Ta) | 2.4 mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | 1900pF @ 20V | 5V | +6V, -4V | |||
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72,160
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|
EPC | MOSFET NCH 40V 31A DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | 40V | 31A (Ta) | 2.4 mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | 1900pF @ 20V | 5V | +6V, -4V | |||
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|
|
GET PRICE |
73,000
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|
EPC | MOSFET NCH 40V 31A DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | - | - | N-Channel | 40V | 31A (Ta) | 2.4 mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | 1900pF @ 20V | - | - | ||
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29,640
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|
EPC | MOSFET NCH 40V 31A DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | - | - | N-Channel | 40V | 31A (Ta) | 2.4 mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | 1900pF @ 20V | - | - | |||
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21,720
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|
EPC | MOSFET NCH 40V 31A DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | - | - | N-Channel | 40V | 31A (Ta) | 2.4 mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | 1900pF @ 20V | - | - |
