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4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
47,520
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Infineon Technologies | MOSFET N-CH 100V 120A D2PAK-3 | OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 250W (Tc) | N-Channel | - | 100V | 120A (Tc) | 2.7 mOhm @ 100A, 10V | 3.8V @ 184µA | 139nC @ 10V | 10300pF @ 50V | 6V, 10V | ±20V | ||
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41,840
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Infineon Technologies | MOSFET N-CH 100V 120A D2PAK-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 250W (Tc) | N-Channel | - | 100V | 120A (Tc) | 2.7 mOhm @ 100A, 10V | 3.8V @ 184µA | 139nC @ 10V | 10300pF @ 50V | 6V, 10V | ±20V | |||
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72,560
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Infineon Technologies | MOSFET N-CH 100V 120A D2PAK-3 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 250W (Tc) | N-Channel | - | 100V | 120A (Tc) | 2.7 mOhm @ 100A, 10V | 3.8V @ 184µA | 139nC @ 10V | 10300pF @ 50V | 6V, 10V | ±20V | |||
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23,800
One step to sell excess stocks.Or submit Qty to get quotes
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Infineon Technologies | MOSFET N-CH TO220-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 250W (Tc) | N-Channel | - | 100V | 120A (Tc) | 3 mOhm @ 100A, 10V | 3.8V @ 184µA | 139nC @ 10V | 10300pF @ 50V | 6V, 10V | ±20V |
