Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXTF02N450
Per Unit
$18.63
RFQ
27,720
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 4500V 0.2A I4PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole i4-Pac™-5 (3 Leads) ISOPLUS i4-PAC™ 78W (Tc) N-Channel 4500V 200mA (Tc) 750 Ohm @ 10mA, 10V 6.5V @ 250µA 10.4nC @ 10V 256pF @ 25V 10V ±20V
IXTF1N450
Per Unit
$25.31
RFQ
32,480
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 4500V 0.9A I4PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole i4-Pac™-5 (3 Leads) ISOPLUS i4-PAC™ 160W (Tc) N-Channel 4500V 900mA (Tc) 85 Ohm @ 50mA, 10V 6.5V @ 250µA 40nC @ 10V 1730pF @ 25V 10V ±20V
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