- Manufacture :
- Series :
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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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10 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
62,940
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|
Infineon Technologies | MOSFET N-CH 85V 95A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 167W (Tc) | N-Channel | - | 85V | 95A (Tc) | 6.4 mOhm @ 95A, 10V | 4V @ 130µA | 99nC @ 10V | 6690pF @ 40V | 10V | ±20V | ||
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70,980
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|
Infineon Technologies | MOSFET N-CH 100V 95A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 167W (Tc) | N-Channel | - | 100V | 95A (Tc) | 8.5 mOhm @ 95A, 10V | 4V @ 130µA | 100nC @ 10V | 6660pF @ 50V | 10V | ±20V | ||
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44,800
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|
Infineon Technologies | MOSFET N-CH 85V 95A TO263-3 | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 167W (Tc) | N-Channel | - | 85V | 95A (Tc) | 8.2 mOhm @ 95A, 10V | 4V @ 130µA | 99nC @ 10V | 6690pF @ 40V | 10V | ±20V | ||
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66,880
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|
Infineon Technologies | MOSFET N-CH 100V 95A TO263-3 | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 167W (Tc) | N-Channel | - | 100V | 95A (Tc) | 8.2 mOhm @ 95A, 10V | 4V @ 130µA | 100nC @ 10V | 6660pF @ 50V | 10V | ±20V | ||
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GET PRICE |
65,680
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|
Infineon Technologies | MOSFET N-CH 85V 95A TO-220 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 167W (Tc) | N-Channel | - | 85V | 95A (Tc) | 6.4 mOhm @ 95A, 10V | 4V @ 130µA | 99nC @ 10V | 6690pF @ 40V | 10V | ±20V | ||
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GET PRICE |
24,580
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|
Infineon Technologies | MOSFET N-CH 100V 95A TO-220 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 167W (Tc) | N-Channel | - | 100V | 95A (Tc) | 8.5 mOhm @ 95A, 10V | 4V @ 130µA | 100nC @ 10V | 6660pF @ 50V | 10V | ±20V | ||
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37,600
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|
Infineon Technologies | MOSFET N-CH 120V 100A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 188W (Tc) | N-Channel | - | 120V | 100A (Tc) | 7.6 mOhm @ 100A, 10V | 4V @ 130µA | 101nC @ 10V | 6640pF @ 60V | 10V | ±20V | |||
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36,200
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|
ON Semiconductor | FET ENGR DEV-NOT REL | PowerTrench® | Active | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 2.4W (Ta), 107W (Tc) | N-Channel | - | 100V | 76A (Tc) | 8.5 mOhm @ 76A, 10V | 4V @ 130µA | 34nC @ 10V | 2475pF @ 50V | 10V | ±20V | |||
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21,400
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|
ON Semiconductor | FET ENGR DEV-NOT REL | PowerTrench® | Active | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F-3 | 2.4W (Ta), 35W (Tc) | N-Channel | - | 100V | 76A (Tc) | 8.5 mOhm @ 76A, 10V | 4V @ 130µA | 34nC @ 10V | 2475pF @ 50V | 10V | ±20V | |||
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25,060
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|
Infineon Technologies | MOSFET N-CH 120V 100A TO220-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 188W (Tc) | N-Channel | - | 120V | 100A (Tc) | 7.6 mOhm @ 100A, 10V | 4V @ 130µA | 101nC @ 10V | 6640pF @ 60V | 10V | ±20V |