- Manufacture :
- Part Status :
- Packaging :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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7 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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34,220
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|
Alpha & Omega Semiconductor Inc. | MOSFET P-CH 8V 3.5A 4WLCSP | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, No Lead | 4-AlphaDFN (1.57x1.57) | 550mW (Ta) | P-Channel | 8V | 3.5A (Ta) | 28 mOhm @ 1.5A, 2.5V | 650mV @ 250µA | 27nC @ 4.5V | 1935pF @ 4V | 1.2V, 2.5V | ±5V | ||
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45,340
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|
Alpha & Omega Semiconductor Inc. | MOSFET P-CH 8V 8A 6DFN | - | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-DFN-EP (2x2) | 2.8W (Ta) | P-Channel | 8V | 8A (Ta) | 22 mOhm @ 8A, 2.5V | 650mV @ 250µA | 18nC @ 4.5V | 1465pF @ 4V | 1.2V, 2.5V | ±5V | ||
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34,260
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|
Alpha & Omega Semiconductor Inc. | MOSFET P-CH 8V 8A 6DFN | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-DFN-EP (2x2) | 2.8W (Ta) | P-Channel | 8V | 8A (Ta) | 22 mOhm @ 8A, 2.5V | 650mV @ 250µA | 18nC @ 4.5V | 1465pF @ 4V | 1.2V, 2.5V | ±5V | |||
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61,840
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|
Alpha & Omega Semiconductor Inc. | MOSFET P-CH 8V 8A 6DFN | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-DFN-EP (2x2) | 2.8W (Ta) | P-Channel | 8V | 8A (Ta) | 22 mOhm @ 8A, 2.5V | 650mV @ 250µA | 18nC @ 4.5V | 1465pF @ 4V | 1.2V, 2.5V | ±5V | ||
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|
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57,660
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|
Diodes Incorporated | MOSFET P-CH 12V 3.3A U-WLB1010-4 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-UFBGA, WLBGA | U-WLB1010-4 | 820mW (Ta) | P-Channel | 12V | 3A (Ta), 3.3A (Ta) | 80 mOhm @ 500mA, 4.5V | 650mV @ 250µA | 5nC @ 4.5V | 350pF @ 6V | 0.9V, 4.5V | -6V | ||
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23,340
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|
Diodes Incorporated | MOSFET P-CH 12V 3.3A U-WLB1010-4 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-UFBGA, WLBGA | U-WLB1010-4 | 820mW (Ta) | P-Channel | 12V | 3A (Ta), 3.3A (Ta) | 80 mOhm @ 500mA, 4.5V | 650mV @ 250µA | 5nC @ 4.5V | 350pF @ 6V | 0.9V, 4.5V | -6V | |||
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68,660
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|
Diodes Incorporated | MOSFET P-CH 12V 3.3A U-WLB1010-4 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-UFBGA, WLBGA | U-WLB1010-4 | 820mW (Ta) | P-Channel | 12V | 3A (Ta), 3.3A (Ta) | 80 mOhm @ 500mA, 4.5V | 650mV @ 250µA | 5nC @ 4.5V | 350pF @ 6V | 0.9V, 4.5V | -6V |
