12 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPP80N06S207AKSA1
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RFQ
37,980
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Infineon Technologies MOSFET N-CH 55V 80A TO220-3 OptiMOS™ Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 250W (Tc) N-Channel - 55V 80A (Tc) 6.6 mOhm @ 68A, 10V 4V @ 180µA 110nC @ 10V 3400pF @ 25V 10V ±20V
IPI80N06S207AKSA1
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RFQ
69,780
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Infineon Technologies MOSFET N-CH 55V 80A TO262-3 OptiMOS™ Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 250W (Tc) N-Channel - 55V 80A (Tc) 6.6 mOhm @ 68A, 10V 4V @ 180µA 110nC @ 10V 3400pF @ 25V 10V ±20V
IPI070N06N G
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RFQ
27,860
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Infineon Technologies MOSFET N-CH 60V 80A TO220-3 OptiMOS™ Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 250W (Tc) N-Channel - 60V 80A (Tc) 7 mOhm @ 80A, 10V 4V @ 180µA 118nC @ 10V 4100pF @ 30V 10V ±20V
IPI06CN10N G
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RFQ
27,220
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Infineon Technologies MOSFET N-CH 100V 100A TO262-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 214W (Tc) N-Channel - 100V 100A (Tc) 6.5 mOhm @ 100A, 10V 4V @ 180µA 139nC @ 10V 9200pF @ 50V 10V ±20V
SPP80N06S2-07
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RFQ
52,560
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Infineon Technologies MOSFET N-CH 55V 80A TO-220 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 250W (Tc) N-Channel - 55V 80A (Tc) 6.6 mOhm @ 68A, 10V 4V @ 180µA 110nC @ 10V 4540pF @ 25V 10V ±20V
SPI80N06S2-07
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RFQ
27,280
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Infineon Technologies MOSFET N-CH 55V 80A I2PAK OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 250W (Tc) N-Channel - 55V 80A (Tc) 6.6 mOhm @ 68A, 10V 4V @ 180µA 110nC @ 10V 4540pF @ 25V 10V ±20V
IPP070N06N G
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RFQ
16,160
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Infineon Technologies MOSFET N-CH 60V 80A TO-220 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 250W (Tc) N-Channel - 60V 80A (Tc) 7 mOhm @ 80A, 10V 4V @ 180µA 118nC @ 10V 4100pF @ 30V 10V ±20V
IPP06CNE8N G
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RFQ
29,320
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Infineon Technologies MOSFET N-CH 85V 100A TO-220 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 214W (Tc) N-Channel - 85V 100A (Tc) 6.5 mOhm @ 100A, 10V 4V @ 180µA 138nC @ 10V 9240pF @ 40V 10V ±20V
IPP06CN10N G
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RFQ
48,220
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Infineon Technologies MOSFET N-CH 100V 100A TO-220 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 214W (Tc) N-Channel - 100V 100A (Tc) 6.5 mOhm @ 100A, 10V 4V @ 180µA 139nC @ 10V 9200pF @ 50V 10V ±20V
IPP80N06S207AKSA4
Per Unit
$0.51
RFQ
19,780
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Infineon Technologies MOSFET N-CH 55V 80A TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 250W (Tc) N-Channel - 55V 80A (Tc) 6.6 mOhm @ 68A, 10V 4V @ 180µA 110nC @ 10V 3400pF @ 25V 10V ±20V
IPP06CN10NGXKSA1
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RFQ
28,760
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Infineon Technologies MOSFET N-CH 100V 100A TO-220 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 214W (Tc) N-Channel - 100V 100A (Tc) 6.5 mOhm @ 100A, 10V 4V @ 180µA 139nC @ 10V 9200pF @ 50V 10V ±20V
IPI80N06S207AKSA2
Per Unit
$0.59
RFQ
76,680
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Infineon Technologies MOSFET N-CH 55V 80A TO262-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 250W (Tc) N-Channel - 55V 80A (Tc) 6.6 mOhm @ 68A, 10V 4V @ 180µA 110nC @ 10V 3400pF @ 25V 10V ±20V
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