Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRLH5030TRPBF
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RFQ
72,460
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Infineon Technologies MOSFET N-CH 100V 13A 8PQFN HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN 8-PQFN (5x6) 3.6W (Ta) N-Channel - 100V 13A (Ta), 100A (Tc) 9 mOhm @ 50A, 10V 2.5V @ 150µA 94nC @ 10V 5185pF @ 50V 4.5V, 10V ±16V
IRLH5030TRPBF
Per Unit
$1.64
RFQ
24,700
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Infineon Technologies MOSFET N-CH 100V 13A 8PQFN HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN 8-PQFN (5x6) 3.6W (Ta) N-Channel - 100V 13A (Ta), 100A (Tc) 9 mOhm @ 50A, 10V 2.5V @ 150µA 94nC @ 10V 5185pF @ 50V 4.5V, 10V ±16V
IRLH5034TRPBF
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RFQ
69,860
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Infineon Technologies MOSFET N-CH 40V 100A 8-PQFN HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN 8-PQFN (5x6) 3.6W (Ta) N-Channel - 40V 29A (Ta), 100A (Tc) 2.4 mOhm @ 50A, 10V 2.5V @ 150µA 82nC @ 10V 4730pF @ 25V 4.5V, 10V ±16V
IRLH5034TRPBF
Per Unit
$1.66
RFQ
51,820
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 40V 100A 8-PQFN HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN 8-PQFN (5x6) 3.6W (Ta) N-Channel - 40V 29A (Ta), 100A (Tc) 2.4 mOhm @ 50A, 10V 2.5V @ 150µA 82nC @ 10V 4730pF @ 25V 4.5V, 10V ±16V
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