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| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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Rohm Semiconductor | MOSFET N-CH 650V 29A TO-220AB | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 165W (Tc) | N-Channel | 650V | 29A (Tc) | 156 mOhm @ 10A, 18V | 4V @ 3.3mA | 61nC @ 18V | 1200pF @ 500V | 18V | +22V, -6V |
