Packaging :
Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RFQ
64,940
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Microsemi Corporation MOSFET N-CH 700V D3PAK - Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA D3Pak 52W (Tc) N-Channel 1700V 4.6A (Tc) 1.2 Ohm @ 2A, 20V 3.2V @ 500µA 29nC @ 20V 325pF @ 1000V 20V +25V, -10V
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RFQ
67,780
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Microsemi Corporation MOSFET N-CH 700V TO247 - Obsolete Tube SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 65W (Tc) N-Channel 1700V 5A (Tc) 1.25 Ohm @ 2.5A, 20V 3.2V @ 500µA 21nC @ 20V 249pF @ 1000V 20V +25V, -10V
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