Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PSMN085-150K,518
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RFQ
29,740
One step to sell excess stocks.Or submit Qty to get quotes
Nexperia USA Inc. MOSFET N-CH 150V 3.5A SOT96-1 TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 3.5W (Tc) N-Channel - 150V 3.5A (Tc) 85 mOhm @ 3.5A, 10V 4V @ 1mA 40nC @ 10V 1310pF @ 25V 10V ±20V
SQ9407EY-T1_GE3
Per Unit
$0.64
RFQ
70,760
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Vishay Siliconix MOSFET P-CHANNEL 60V 4.6A 8SO Automotive, AEC-Q101, TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TA) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 3.75W (Tc) P-Channel - 60V 4.6A (Tc) 85 mOhm @ 3.5A, 10V 2.5V @ 250µA 40nC @ 10V 1140pF @ 30V 4.5V, 10V ±20V
SQ9407EY-T1_GE3
Per Unit
$0.24
RFQ
63,000
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET P-CHANNEL 60V 4.6A 8SO Automotive, AEC-Q101, TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TA) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 3.75W (Tc) P-Channel - 60V 4.6A (Tc) 85 mOhm @ 3.5A, 10V 2.5V @ 250µA 40nC @ 10V 1140pF @ 30V 4.5V, 10V ±20V
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