- Part Status :
- Operating Temperature :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
14 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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44,060
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|
ON Semiconductor | MOSFET N-CH 30V 25A D2PAK | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -65°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 50W (Tc) | N-Channel | - | 30V | 25A (Tc) | 22 mOhm @ 25A, 10V | 3V @ 250µA | 40nC @ 10V | 1100pF @ 15V | 4.5V, 10V | ±20V | ||
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GET PRICE |
31,520
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|
ON Semiconductor | MOSFET P-CH 20V 4.3A 8-SOIC | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 20V | 4.3A (Ta) | 100 mOhm @ 2A, 10V | 3V @ 250µA | 40nC @ 10V | 1425pF @ 10V | 4.5V, 10V | ±20V | ||
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GET PRICE |
41,800
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|
Vishay Siliconix | MOSFET N-CH 60V 50A D2PAK | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | 3.7W (Ta), 93W (Tc) | N-Channel | - | 60V | 50A (Tc) | 16 mOhm @ 20A, 10V | 3V @ 250µA | 40nC @ 10V | 1325pF @ 25V | 4.5V, 10V | ±20V | ||
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45,640
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|
Vishay Siliconix | MOSFET P-CH 30V 6.4A 1212-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 1.5W (Ta) | P-Channel | - | 30V | 6.4A (Ta) | 25 mOhm @ 9.8A, 10V | 3V @ 250µA | 40nC @ 10V | - | 4.5V, 10V | ±20V | |||
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22,140
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|
Vishay Siliconix | MOSFET P-CH 30V 6.4A PPAK 1212-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 1.5W (Ta) | P-Channel | - | 30V | 6.4A (Ta) | 25 mOhm @ 9.8A, 10V | 3V @ 250µA | 40nC @ 10V | - | 4.5V, 10V | ±20V | |||
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26,160
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|
Micro Commercial Co | N-CHANNEL MOSFET, SOP-8 PACKAGE | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 1.4W (Ta) | N-Channel | - | 30V | 7.5A (Ta) | 13.5 mOhm @ 10A, 10V | 3V @ 250µA | 40nC @ 10V | 9130pF @ 10V | 10V | ±12V | |||
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45,540
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|
Vishay Siliconix | MOSFET P-CH 60V 3.2A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 1.5W (Ta) | P-Channel | - | 60V | 3.2A (Ta) | 64 mOhm @ 5A, 10V | 3V @ 250µA | 40nC @ 10V | - | 4.5V, 10V | ±20V | |||
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41,060
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|
ON Semiconductor | MOSFET P-CH 30V 8-SOIC | Automotive, AEC-Q101, PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 8.8A (Ta) | 20 mOhm @ 8.8A, 10V | 3V @ 250µA | 40nC @ 10V | 1845pF @ 15V | 4.5V, 10V | ±25V | |||
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29,220
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|
Vishay Siliconix | MOSFET P-CH 60V 3.2A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 1.5W (Ta) | P-Channel | - | 60V | 3.2A (Ta) | 64 mOhm @ 5A, 10V | 3V @ 250µA | 40nC @ 10V | - | 4.5V, 10V | ±20V | |||
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65,100
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|
Vishay Siliconix | MOSFET P-CH 60V 19A TO252 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 2.7W (Ta), 46W (Tc) | P-Channel | - | 60V | 19A (Tc) | 60 mOhm @ 10A, 10V | 3V @ 250µA | 40nC @ 10V | 1710pF @ 25V | 4.5V, 10V | ±20V | |||
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61,940
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|
Vishay Siliconix | MOSFET P-CH 60V 18.3A TO252 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 2.3W (Ta), 38.5W (Tc) | P-Channel | - | 60V | 18.3A (Tc) | 60 mOhm @ 10A, 10V | 3V @ 250µA | 40nC @ 10V | 1710pF @ 25V | 4.5V, 10V | ±20V | |||
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50,400
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|
Vishay Siliconix | MOSFET P-CH 60V 18.3A TO-252 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 2.3W (Ta), 38.5W (Tc) | P-Channel | - | 60V | 18.3A (Tc) | 60 mOhm @ 10A, 10V | 3V @ 250µA | 40nC @ 10V | 1710pF @ 25V | 4.5V, 10V | ±20V | |||
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25,580
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|
ON Semiconductor | MOSFET P-CH 30V 8.8A 8-SOIC | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 8.8A (Ta) | 20 mOhm @ 8.8A, 10V | 3V @ 250µA | 40nC @ 10V | 1845pF @ 15V | 4.5V, 10V | ±25V | |||
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41,300
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|
Infineon Technologies | MOSFET P-CH 30V 4.6A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Tc) | P-Channel | - | 30V | 4.6A (Ta) | 70 mOhm @ 4.6A, 10V | 3V @ 250µA | 40nC @ 10V | 870pF @ 10V | 4.5V, 10V | ±20V |
