- Manufacture :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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14,740
One step to sell excess stocks.Or submit Qty to get quotes
|
IXYS | MOSFET N-CH 150V 56A TO-263 | TrenchHV™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | 300W (Tc) | N-Channel | - | 150V | 56A (Tc) | 36 mOhm @ 28A, 10V | 4.5V @ 250µA | 34nC @ 10V | 2250pF @ 25V | 10V | ±30V | |||
|
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29,100
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | MOSFET N-CH 650V 10A ITO220S | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | ITO-220S | 45W (Tc) | N-Channel | - | 650V | 10A (Tc) | 900 mOhm @ 2A, 10V | 4.5V @ 250µA | 34nC @ 10V | 1650pF @ 50V | 10V | ±30V | |||
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|
12,200
One step to sell excess stocks.Or submit Qty to get quotes
|
IXYS | MOSFET N-CH 150V 56A TO-220 | TrenchHV™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 300W (Tc) | N-Channel | - | 150V | 56A (Tc) | 36 mOhm @ 28A, 10V | 4.5V @ 250µA | 34nC @ 10V | 2250pF @ 25V | 10V | ±30V |
