- Part Status :
- Operating Temperature :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
13 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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35,080
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STMicroelectronics | MOSFET P-CH 40V 46A DPAK | STripFET™ F6 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 70W (Tc) | P-Channel | - | 40V | 46A (Tc) | 15 mOhm @ 23A, 10V | 2.5V @ 250µA | 34nC @ 4.5V | 3525pF @ 25V | 4.5V, 10V | ±20V | |||
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76,400
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|
Nexperia USA Inc. | MOSFET N-CH 20V 9A 6DFN | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-DFN2020MD (2x2) | 1.7W (Ta), 12.5W (Tc) | N-Channel | - | 20V | 9A (Ta) | 14 mOhm @ 9A, 4.5V | 700mV @ 250µA | 34nC @ 4.5V | 2175pF @ 10V | 1.8V, 4.5V | ±12V | ||
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71,800
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STMicroelectronics | MOSFET P-CH 40V 10A 8SOIC | STripFET™ F6 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.7W (Ta) | P-Channel | - | 40V | 10A (Ta) | 15 mOhm @ 3A, 10V | 1V @ 250µA (Min) | 34nC @ 4.5V | 3525pF @ 25V | 4.5V, 10V | ±20V | |||
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45,140
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Renesas Electronics America | MOSFET N-CH 30V 50A 8WPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WPAK (3) | 50W (Tc) | N-Channel | - | 30V | 50A (Ta) | 2.9 mOhm @ 25A, 10V | 2.5V @ 1mA | 34nC @ 4.5V | 5600pF @ 10V | 4.5V, 10V | ±20V | |||
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71,440
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ON Semiconductor | MOSFET P-CH 12V 12A 6QFN | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-MicroFET (2x2) | 2.4W (Ta) | P-Channel | - | 12V | 12A (Ta) | 12.5 mOhm @ 12A, 4.5V | 1V @ 250µA | 34nC @ 4.5V | 3957pF @ 6V | 1.8V, 4.5V | ±8V | |||
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48,800
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STMicroelectronics | MOSFET N-CH 60V 7.5A 8-SOIC | STripFET™ II | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Tc) | N-Channel | - | 60V | 7.5A (Tc) | 19.5 mOhm @ 3.5A, 10V | 1V @ 250µA | 34nC @ 4.5V | 1700pF @ 25V | 5V, 10V | ±16V | |||
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17,120
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|
ON Semiconductor | MOSFET N-CH 30V 147A SO8FL | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | 930mW (Ta), 69.44W (Tc) | N-Channel | - | 30V | 17.1A (Ta), 147A (Tc) | 2 mOhm @ 30A, 10V | 2.2V @ 250µA | 34nC @ 4.5V | 5505pF @ 15V | 4.5V, 10V | ±20V | |||
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61,280
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ON Semiconductor | MOSFET N-CH 30V 147A SO8FL | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | 930mW (Ta), 69.44W (Tc) | N-Channel | - | 30V | 17.1A (Ta), 147A (Tc) | 2 mOhm @ 30A, 10V | 2.2V @ 250µA | 34nC @ 4.5V | 5505pF @ 15V | 4.5V, 10V | ±20V | |||
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48,200
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Rohm Semiconductor | MOSFET P-CH 12V 6A TSMT8 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TSMT8 | 700mW (Ta) | P-Channel | - | 12V | 6A (Ta) | 23 mOhm @ 6A, 4.5V | 1V @ 1mA | 34nC @ 4.5V | 2800pF @ 6V | 1.5V, 4.5V | ±10V | |||
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24,800
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|
Nexperia USA Inc. | MOSFET N-CH 20V SOT1220 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-DFN2020MD (2x2) | 1.7W (Ta), 12.5W (Tc) | N-Channel | - | 20V | 9A (Ta) | 14 mOhm @ 9A, 4.5V | 900mV @ 250µA | 34nC @ 4.5V | 2175pF @ 10V | 1.8V, 4.5V | ±12V | |||
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69,040
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|
Rohm Semiconductor | MOSFET P-CH 12V 5A TSST8 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-TSST | 600mW (Ta) | P-Channel | - | 12V | 5A (Ta) | 26 mOhm @ 5A, 4.5V | 1V @ 1mA | 34nC @ 4.5V | 2800pF @ 6V | 1.5V, 4.5V | ±10V | |||
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55,460
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Infineon Technologies | MOSFET N-CH 40V 9.4A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 40V | 9.4A (Ta) | 15.5 mOhm @ 9.4A, 10V | 2V @ 250µA | 34nC @ 4.5V | 2460pF @ 20V | 4.5V, 10V | ±12V | |||
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39,920
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STMicroelectronics | MOSFET P-CH 40V 60A 8POWERFLAT | STripFET™ F6 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 100W (Tc) | P-Channel | - | 40V | 60A (Tc) | 14 mOhm @ 6.5A, 10V | 1V @ 250µA (Min) | 34nC @ 4.5V | 3525pF @ 25V | 4.5V, 10V | ±20V |
