- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
13 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
58,160
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|
Infineon Technologies | MOSFET N-CH 30V 24A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 24A (Ta), 136A (Tc) | 3.3 mOhm @ 24A, 10V | 2.25V @ 250µA | 45nC @ 4.5V | 3970pF @ 15V | 4.5V, 10V | ±20V | ||
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64,000
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|
ON Semiconductor | MOSFET N-CH 30V 11A 8SOIC | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 930mW (Ta) | N-Channel | - | 30V | 11A (Ta) | 4.5 mOhm @ 15A, 10V | 2.5V @ 250µA | 45nC @ 4.5V | 6000pF @ 15V | 4.5V, 10V | ±20V | ||
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45,320
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|
Infineon Technologies | MOSFET N-CH 30V 25A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 25A (Ta), 140A (Tc) | 2.9 mOhm @ 25A, 10V | 2.35V @ 100µA | 45nC @ 4.5V | 3770pF @ 15V | 4.5V, 10V | ±20V | ||
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GET PRICE |
69,380
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|
Infineon Technologies | MOSFET N-CH 30V 25A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 25A (Ta), 140A (Tc) | 2.9 mOhm @ 25A, 10V | 2.35V @ 100µA | 45nC @ 4.5V | 3770pF @ 15V | 4.5V, 10V | ±20V | ||
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GET PRICE |
53,000
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|
Infineon Technologies | MOSFET N-CH 20V 26A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MT | DIRECTFET™ MT | 3.6W (Ta), 42W (Tc) | N-Channel | - | 20V | 26A (Ta), 85A (Tc) | 3.8 mOhm @ 26A, 10V | 2.2V @ 250µA | 45nC @ 4.5V | 3440pF @ 15V | 4.5V, 10V | ±20V | ||
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31,320
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|
Renesas Electronics America | MOSFET N-CH 40V 50A LFPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 30W (Tc) | N-Channel | - | 40V | 50A (Ta) | 3.5 mOhm @ 25A, 10V | 2.5V @ 1mA | 45nC @ 4.5V | 6650pF @ 10V | 4.5V, 10V | ±20V | |||
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GET PRICE |
50,380
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|
Infineon Technologies | MOSFET N-CH 30V 24A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 24A (Ta), 136A (Tc) | 3.3 mOhm @ 24A, 10V | 2.25V @ 250µA | 45nC @ 4.5V | 3970pF @ 15V | 4.5V, 10V | ±20V | ||
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GET PRICE |
58,640
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|
Infineon Technologies | MOSFET N-CH 30V 24A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 24A (Ta), 136A (Tc) | 3.3 mOhm @ 24A, 10V | 2.25V @ 250µA | 45nC @ 4.5V | 3970pF @ 15V | 4.5V, 10V | ±20V | ||
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47,980
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|
STMicroelectronics | MOSFET N-CH 40V 140A PWRFLAT5X6 | STripFET™ V | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 80W (Tc) | N-Channel | - | 40V | 140A (Tc) | 2.75 mOhm @ 16A, 10V | 1V @ 250µA | 45nC @ 4.5V | 5900pF @ 25V | 4.5V, 10V | ±22V | |||
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55,040
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|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 30V 50A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 40W (Tc) | N-Channel | - | 30V | 50A (Tc) | 9 mOhm @ 16A, 10V | 2.5V @ 250µA | 45nC @ 4.5V | 750pF @ 25V | 4.5V, 10V | ±20V | |||
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67,880
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|
Nexperia USA Inc. | MOSFET P-CH 20V 5A 6DFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-DFN2020MD (2x2) | 1.7W (Ta), 12.5W (Tc) | P-Channel | - | 20V | 5A (Ta) | 32.5 mOhm @ 5A, 4.5V | 900mV @ 250µA | 45nC @ 4.5V | 2970pF @ 10V | 1.8V, 4.5V | ±12V | |||
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21,740
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|
Nexperia USA Inc. | MOSFET P-CH 20V 7.2A SOT1220 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-DFN2020MD (2x2) | 1.7W (Ta), 12.5W (Tc) | P-Channel | - | 20V | 7.2A (Ta) | 23.5 mOhm @ 7.2A, 4.5V | 900mV @ 250µA | 45nC @ 4.5V | 294pF @ 10V | 1.8V, 4.5V | ±12V | |||
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22,740
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|
Infineon Technologies | MOSFET N-CH 30V 21A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 21A (Ta) | 3.7 mOhm @ 20A, 10V | 2.35V @ 100µA | 45nC @ 4.5V | 4090pF @ 15V | 4.5V, 10V | ±20V |
