Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SIHW33N60E-GE3
Per Unit
$3.86
RFQ
21,360
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 600V 33A TO-247AD - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3 Full Pack TO-247AD 278W (Tc) N-Channel 600V 33A (Tc) 99 mOhm @ 16.5A, 10V 4V @ 250µA 150nC @ 10V 3508pF @ 100V 10V ±30V
IRFP450
GET PRICE
RFQ
62,540
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 500V 14A TO-247AD - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3 Full Pack TO-247AD 190W (Tc) N-Channel 500V 14A (Tc) 400 mOhm @ 8.4A, 10V 4V @ 250µA 150nC @ 10V 2800pF @ 25V 10V ±20V
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