4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
AUIRF1404ZL
Per Unit
$1.08
RFQ
23,260
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 40V 160A TO262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 200W (Tc) N-Channel - 40V 160A (Tc) 3.7 mOhm @ 75A, 10V 4V @ 250µA 150nC @ 10V 4340pF @ 25V 10V ±20V
AUIRF1404Z
Per Unit
$1.67
RFQ
65,920
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 40V 160A TO220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 200W (Tc) N-Channel - 40V 160A (Tc) 3.7 mOhm @ 75A, 10V 4V @ 250µA 150nC @ 10V 4340pF @ 25V 10V ±20V
STI270N4F3
Per Unit
$2.62
RFQ
29,840
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 40V 120A I2PAK Automotive, AEC-Q101, STripFET™ III Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 330W (Tc) N-Channel - 40V 160A (Tc) 2.6 mOhm @ 80A, 10V 4V @ 250µA 150nC @ 10V 7400pF @ 25V 10V ±20V
AUIRF1404ZS
Per Unit
$1.67
RFQ
73,680
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 40V 160A D2PAK HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 200W (Tc) N-Channel - 40V 160A (Tc) 3.7 mOhm @ 75A, 10V 4V @ 250µA 150nC @ 10V 4340pF @ 25V 10V ±20V
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