- Manufacture :
- Series :
- Packaging :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
6 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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20,460
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|
Infineon Technologies | MOSFET N-CH 40V 90A TO252-3-313 | Automotive, AEC-Q101, OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3-313 | 94W (Tc) | N-Channel | 40V | 90A (Tc) | 3.2 mOhm @ 90A, 10V | 4V @ 53µA | 66.8nC @ 10V | 5260pF @ 25V | 10V | ±20V | ||
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21,360
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|
Infineon Technologies | MOSFET N-CH 40V 90A TO252-3-313 | Automotive, AEC-Q101, OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3-313 | 94W (Tc) | N-Channel | 40V | 90A (Tc) | 3.2 mOhm @ 90A, 10V | 4V @ 53µA | 66.8nC @ 10V | 5260pF @ 25V | 10V | ±20V | |||
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72,400
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|
Infineon Technologies | MOSFET N-CH 40V 90A TO252-3-313 | Automotive, AEC-Q101, OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3-313 | 94W (Tc) | N-Channel | 40V | 90A (Tc) | 3.2 mOhm @ 90A, 10V | 4V @ 53µA | 66.8nC @ 10V | 5260pF @ 25V | 10V | ±20V | |||
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GET PRICE |
50,820
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|
Nexperia USA Inc. | MOSFET N-CH 60V LFPAK56 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 167W (Tc) | N-Channel | 60V | 100A (Tc) | 5.6 mOhm @ 25A, 10V | 2.1V @ 1mA | 66.8nC @ 10V | 5026pF @ 25V | 5V, 10V | ±20V | ||
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15,360
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|
Nexperia USA Inc. | MOSFET N-CH 60V LFPAK56 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 167W (Tc) | N-Channel | 60V | 100A (Tc) | 5.6 mOhm @ 25A, 10V | 2.1V @ 1mA | 66.8nC @ 10V | 5026pF @ 25V | 5V, 10V | ±20V | |||
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14,800
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|
Nexperia USA Inc. | MOSFET N-CH 60V LFPAK56 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 167W (Tc) | N-Channel | 60V | 100A (Tc) | 5.6 mOhm @ 25A, 10V | 2.1V @ 1mA | 66.8nC @ 10V | 5026pF @ 25V | 5V, 10V | ±20V |