Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Per Unit
$69.38
RFQ
71,420
One step to sell excess stocks.Or submit Qty to get quotes
Microsemi Corporation MOSFET N-CH 100V 570A SP6 - Active Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount SP6 1660W (Tc) N-Channel 100V 570A (Tc) 2.5 mOhm @ 200A, 10V 4V @ 10mA 1360nC @ 10V 40000pF @ 25V 10V ±30V
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Per Unit
$56.22
RFQ
65,320
One step to sell excess stocks.Or submit Qty to get quotes
Microsemi Corporation MOSFET N-CH 100V 495A SP6 - Active Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount SP6 1250W (Tc) N-Channel 100V 495A (Tc) 2.5 mOhm @ 200A, 10V 4V @ 10mA 1360nC @ 10V 40000pF @ 25V 10V ±30V
Default Photo
Per Unit
$56.22
RFQ
33,200
One step to sell excess stocks.Or submit Qty to get quotes
Microsemi Corporation MOSFET N-CH 100V 495A SP6 - Active Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount SP6 1250W (Tc) N-Channel 100V 495A (Tc) 2.5 mOhm @ 200A, 10V 4V @ 10mA 1360nC @ 10V 40000pF @ 25V 10V ±30V
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