4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SI5473DC-T1-E3
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RFQ
62,500
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Vishay Siliconix MOSFET P-CH 12V 5.9A 1206-8 TrenchFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SMD, Flat Lead 1206-8 ChipFET™ 1.3W (Ta) P-Channel 12V 5.9A (Ta) 27 mOhm @ 5.9A, 4.5V 1V @ 250µA 32nC @ 4.5V - 1.8V, 4.5V ±8V
SI5473DC-T1-E3
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RFQ
57,300
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Vishay Siliconix MOSFET P-CH 12V 5.9A 1206-8 TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SMD, Flat Lead 1206-8 ChipFET™ 1.3W (Ta) P-Channel 12V 5.9A (Ta) 27 mOhm @ 5.9A, 4.5V 1V @ 250µA 32nC @ 4.5V - 1.8V, 4.5V ±8V
SI5473DC-T1-E3
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RFQ
27,220
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Vishay Siliconix MOSFET P-CH 12V 5.9A 1206-8 TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SMD, Flat Lead 1206-8 ChipFET™ 1.3W (Ta) P-Channel 12V 5.9A (Ta) 27 mOhm @ 5.9A, 4.5V 1V @ 250µA 32nC @ 4.5V - 1.8V, 4.5V ±8V
SI5473DC-T1-GE3
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RFQ
18,820
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET P-CH 12V 5.9A 1206-8 TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SMD, Flat Lead 1206-8 ChipFET™ 1.3W (Ta) P-Channel 12V 5.9A (Ta) 27 mOhm @ 5.9A, 4.5V 1V @ 250µA 32nC @ 4.5V - 1.8V, 4.5V ±8V
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