7 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRF6201PBF
GET PRICE
RFQ
72,540
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 20V 27A 8-SO HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 20V 27A (Ta) 2.45 mOhm @ 27A, 4.5V 1.1V @ 100µA 195nC @ 4.5V 8555pF @ 16V 2.5V, 4.5V ±12V
SIJH440E-T1-GE3
GET PRICE
RFQ
63,540
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 40V 200A POWERPAK8 TrenchFET® Gen IV Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PowerPAK® 8 x 8 158W (Tc) N-Channel - 40V 200A (Tc) 0.96 mOhm @ 20A, 10V 2.3V @ 250µA 195nC @ 4.5V 20330pF @ 20V 4.5V, 10V +20V, -16V
SIJH440E-T1-GE3
Per Unit
$1.58
RFQ
38,540
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 40V 200A POWERPAK8 TrenchFET® Gen IV Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PowerPAK® 8 x 8 158W (Tc) N-Channel - 40V 200A (Tc) 0.96 mOhm @ 20A, 10V 2.3V @ 250µA 195nC @ 4.5V 20330pF @ 20V 4.5V, 10V +20V, -16V
SIJH440E-T1-GE3
Per Unit
$0.66
RFQ
41,980
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 40V 200A POWERPAK8 TrenchFET® Gen IV Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PowerPAK® 8 x 8 158W (Tc) N-Channel - 40V 200A (Tc) 0.96 mOhm @ 20A, 10V 2.3V @ 250µA 195nC @ 4.5V 20330pF @ 20V 4.5V, 10V +20V, -16V
IRF6201TRPBF
GET PRICE
RFQ
37,420
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 20V 27A 8-SOIC HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 20V 27A (Ta) 2.45 mOhm @ 27A, 4.5V 1.1V @ 100µA 195nC @ 4.5V 8555pF @ 16V 2.5V, 4.5V ±12V
IRF6201TRPBF
Per Unit
$0.56
RFQ
64,120
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 20V 27A 8-SOIC HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 20V 27A (Ta) 2.45 mOhm @ 27A, 4.5V 1.1V @ 100µA 195nC @ 4.5V 8555pF @ 16V 2.5V, 4.5V ±12V
IRF6201TRPBF
Per Unit
$0.22
RFQ
67,720
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 20V 27A 8-SOIC HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 20V 27A (Ta) 2.45 mOhm @ 27A, 4.5V 1.1V @ 100µA 195nC @ 4.5V 8555pF @ 16V 2.5V, 4.5V ±12V
Page 1 / 1