- Manufacture :
- Series :
- Packaging :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
9 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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55,340
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|
Texas Instruments | MOSFET P-CH 20V 104A 8VSON | NexFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-VSON (3.3x3.3) | 2.8W (Ta), 96W (Tc) | P-Channel | - | 20V | 104A (Tc) | 6.5 mOhm @ 10A, 4.5V | 1.15V @ 250µA | 14.1nC @ 4.5V | 2120pF @ 10V | 1.8V, 4.5V | ±12V | ||
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38,400
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|
Texas Instruments | MOSFET P-CH 20V 104A 8VSON | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-VSON (3.3x3.3) | 2.8W (Ta), 96W (Tc) | P-Channel | - | 20V | 104A (Tc) | 6.5 mOhm @ 10A, 4.5V | 1.15V @ 250µA | 14.1nC @ 4.5V | 2120pF @ 10V | 1.8V, 4.5V | ±12V | |||
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41,540
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|
Texas Instruments | MOSFET P-CH 20V 104A 8VSON | NexFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-VSON (3.3x3.3) | 2.8W (Ta), 96W (Tc) | P-Channel | - | 20V | 104A (Tc) | 6.5 mOhm @ 10A, 4.5V | 1.15V @ 250µA | 14.1nC @ 4.5V | 2120pF @ 10V | 1.8V, 4.5V | ±12V | |||
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GET PRICE |
27,380
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|
Texas Instruments | MOSFET P-CH 20V 104A 8VSON | NexFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-VSON (3.3x3.3) | 2.8W (Ta), 96W (Tc) | P-Channel | - | 20V | 104A (Tc) | 6.5 mOhm @ 10A, 4.5V | 1.15V @ 250µA | 14.1nC @ 4.5V | 2120pF @ 10V | 1.8V, 4.5V | ±12V | ||
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21,980
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|
Texas Instruments | MOSFET P-CH 20V 104A 8VSON | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-VSON (3.3x3.3) | 2.8W (Ta), 96W (Tc) | P-Channel | - | 20V | 104A (Tc) | 6.5 mOhm @ 10A, 4.5V | 1.15V @ 250µA | 14.1nC @ 4.5V | 2120pF @ 10V | 1.8V, 4.5V | ±12V | |||
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46,160
One step to sell excess stocks.Or submit Qty to get quotes
|
Texas Instruments | MOSFET P-CH 20V 104A 8VSON | NexFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-VSON (3.3x3.3) | 2.8W (Ta), 96W (Tc) | P-Channel | - | 20V | 104A (Tc) | 6.5 mOhm @ 10A, 4.5V | 1.15V @ 250µA | 14.1nC @ 4.5V | 2120pF @ 10V | 1.8V, 4.5V | ±12V | |||
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76,060
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|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 4A ES6 | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | P-Channel | - | 20V | 4A (Ta) | 40.7 mOhm @ 3A, 4.5V | 1V @ 1mA | 14.1nC @ 4.5V | 970pF @ 10V | 1.5V, 4.5V | ±8V | ||
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33,280
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|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 4A ES6 | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | P-Channel | - | 20V | 4A (Ta) | 40.7 mOhm @ 3A, 4.5V | 1V @ 1mA | 14.1nC @ 4.5V | 970pF @ 10V | 1.5V, 4.5V | ±8V | |||
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71,440
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 4A ES6 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | P-Channel | - | 20V | 4A (Ta) | 40.7 mOhm @ 3A, 4.5V | 1V @ 1mA | 14.1nC @ 4.5V | 970pF @ 10V | 1.5V, 4.5V | ±8V |
