4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRL60SL216
Per Unit
$3.80
RFQ
30,720
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 60V 195A HEXFET®, StrongIRFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 375W (Tc) N-Channel - 60V 195A (Tc) 1.95 mOhm @ 100A, 10V 2.4V @ 250µA 255nC @ 4.5V 15330pF @ 25V 4.5V, 10V ±20V
IRL60S216
GET PRICE
RFQ
30,780
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 60V 195A HEXFET®, StrongIRFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 375W (Tc) N-Channel - 60V 195A (Tc) 1.95 mOhm @ 100A, 10V 2.4V @ 250µA 255nC @ 4.5V 15330pF @ 25V 4.5V, 10V ±20V
IRL60S216
Per Unit
$3.92
RFQ
46,920
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 60V 195A HEXFET®, StrongIRFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 375W (Tc) N-Channel - 60V 195A (Tc) 1.95 mOhm @ 100A, 10V 2.4V @ 250µA 255nC @ 4.5V 15330pF @ 25V 4.5V, 10V ±20V
IRL60S216
Per Unit
$2.17
RFQ
63,940
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 60V 195A HEXFET®, StrongIRFET™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 375W (Tc) N-Channel - 60V 195A (Tc) 1.95 mOhm @ 100A, 10V 2.4V @ 250µA 255nC @ 4.5V 15330pF @ 25V 4.5V, 10V ±20V
Page 1 / 1