Supplier Device Package :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SIHG61N65EF-GE3
Per Unit
$7.71
RFQ
64,940
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 650V 64A TO247AC E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 520W (Tc) N-Channel - 650V 64A (Tc) 47 mOhm @ 30.5A, 10V 4V @ 250µA 371nC @ 10V 7407pF @ 100V 10V ±30V
SIHW61N65EF-GE3
Per Unit
$7.71
RFQ
71,860
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 650V 64A TO247AD E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD 520W (Tc) N-Channel - 650V 64A (Tc) 47 mOhm @ 30.5A, 10V 4V @ 250µA 371nC @ 10V 7407pF @ 100V 10V ±30V
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