Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STE26NA90
GET PRICE
RFQ
69,300
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 900V 26A ISOTOP - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Chassis Mount ISOTOP ISOTOP® 450W (Tc) N-Channel - 900V 26A (Tc) 300 mOhm @ 13A, 10V 3.75V @ 1mA 660nC @ 10V 1770pF @ 25V 10V ±30V
IXFN180N20
Per Unit
$20.23
RFQ
33,220
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 200V 180A SOT-227B HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 700W (Tc) N-Channel - 200V 180A (Tc) 10 mOhm @ 500mA, 10V 4V @ 8mA 660nC @ 10V 22000pF @ 25V 10V ±20V
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