2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFN50N120SK
Per Unit
$34.30
RFQ
51,340
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH - Active - SiC (Silicon Carbide Junction Transistor) -40°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B - N-Channel - 1200V 48A (Tc) 52 mOhm @ 40A, 20V 2.8V @ 10mA 115nC @ 20V 1895pF @ 1000V 20V +20V, -5V
C2M0040120D
Per Unit
$17.91
RFQ
74,720
One step to sell excess stocks.Or submit Qty to get quotes
Cree/Wolfspeed MOSFET N-CH 1200V 60A TO-247 Z-FET™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 330W (Tc) N-Channel - 1200V 60A (Tc) 52 mOhm @ 40A, 20V 2.8V @ 10mA 115nC @ 20V 1893pF @ 1000V 20V +25V, -10V
Page 1 / 1