4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
RJK6014DPK-00#T0
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RFQ
39,040
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Renesas Electronics America MOSFET N-CH 600V 11A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 150W (Tc) N-Channel - 600V 16A (Ta) 575 mOhm @ 8A, 10V - 45nC @ 10V 1800pF @ 25V 10V ±30V
RJK6014DPP-E0#T2
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RFQ
69,120
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Renesas Electronics America MOSFET N-CH 600V 16A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 35W (Tc) N-Channel - 600V 16A (Ta) 575 mOhm @ 8A, 10V - 45nC @ 10V 1800pF @ 25V 10V ±30V
IRFPC48
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RFQ
75,700
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Vishay Siliconix MOSFET N-CH 600V 8.9A TO-247AC - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 170W (Tc) N-Channel - 600V 8.9A (Tc) 820 mOhm @ 5.3A, 10V 4V @ 250µA 110nC @ 10V 1800pF @ 25V 10V ±20V
TK12A60D(STA4,Q,M)
Per Unit
$0.75
RFQ
47,920
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Toshiba Semiconductor and Storage MOSFET N-CH 600V 12A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 600V 12A (Ta) 550 mOhm @ 6A, 10V 4V @ 1mA 38nC @ 10V 1800pF @ 25V 10V ±30V
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