Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
NP89N055MUK-S18-AY
GET PRICE
RFQ
13,040
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Renesas Electronics America MOSFET N-CH 55V 90A TO-220 - Active Tube MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-220-3 1.8W (Ta), 147W (Tc) N-Channel - 55V 90A (Tc) 4.4 mOhm @ 45A, 10V 4V @ 250µA 102nC @ 10V 6000pF @ 25V 10V ±20V
FDP3632
Per Unit
$1.70
RFQ
20,060
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ON Semiconductor MOSFET N-CH 100V 80A TO-220AB PowerTrench® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 310W (Tc) N-Channel - 100V 12A (Ta), 80A (Tc) 9 mOhm @ 80A, 10V 4V @ 250µA 110nC @ 10V 6000pF @ 25V 6V, 10V ±20V
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