- Packaging :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
33,560
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 80A TSON | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 630mW (Ta), 104W (Tc) | N-Channel | - | 40V | 80A (Tc) | 2.3 mOhm @ 40A, 10V | 2.4V @ 0.3mA | 41nC @ 10V | 3600pF @ 20V | 4.5V, 10V | ±20V | ||
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22,660
One step to sell excess stocks.Or submit Qty to get quotes
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 80A TSON | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 630mW (Ta), 104W (Tc) | N-Channel | - | 40V | 80A (Tc) | 2.3 mOhm @ 40A, 10V | 2.4V @ 0.3mA | 41nC @ 10V | 3600pF @ 20V | 4.5V, 10V | ±20V | |||
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22,560
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 80A TSON | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 630mW (Ta), 104W (Tc) | N-Channel | - | 40V | 80A (Tc) | 2.3 mOhm @ 40A, 10V | 2.4V @ 0.3mA | 41nC @ 10V | 3600pF @ 20V | 4.5V, 10V | ±20V |
