Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GP2M023A050N
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RFQ
15,720
One step to sell excess stocks.Or submit Qty to get quotes
Global Power Technologies Group MOSFET N-CH 500V 23A TO3PN - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 347W (Tc) N-Channel 500V 23A (Tc) 220 mOhm @ 11.5A, 10V 5V @ 250µA 64nC @ 10V 3270pF @ 25V 10V ±30V
AOK40N30L
Per Unit
$1.08
RFQ
21,420
One step to sell excess stocks.Or submit Qty to get quotes
Alpha & Omega Semiconductor Inc. MOSFET N-CH 300V 40A TO247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 357W (Tc) N-Channel 300V 40A (Tc) 85 mOhm @ 20A, 10V 4.1V @ 250µA 72nC @ 10V 3270pF @ 25V 10V ±30V
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