Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFN39N90
Per Unit
$24.82
RFQ
78,140
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 900V 39A SOT-227B HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 694W (Tc) N-Channel - 900V 39A (Tc) 220 mOhm @ 500mA, 10V 5V @ 8mA 390nC @ 10V 9200pF @ 25V 10V ±20V
IXFN34N100
Per Unit
$21.58
RFQ
53,880
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 1000V 34A SOT-227B HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 700W (Tc) N-Channel - 1000V 34A (Tc) 280 mOhm @ 500mA, 10V 5.5V @ 8mA 380nC @ 10V 9200pF @ 25V 10V ±20V
Default Photo
Per Unit
$16.90
RFQ
16,500
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 1000V 30A ISOPLUS264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS264™ ISOPLUS264™ 550W (Tc) N-Channel - 1000V 30A (Tc) 280 mOhm @ 30A, 10V 5V @ 8mA 380nC @ 10V 9200pF @ 25V 10V ±20V
IXFN36N100
Per Unit
$26.92
RFQ
60,080
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 1KV 36A SOT-227B HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 700W (Tc) N-Channel - 1000V 36A (Tc) 240 mOhm @ 500mA, 10V 5V @ 8mA 380nC @ 10V 9200pF @ 25V 10V ±20V
Page 1 / 1