- Series :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
7 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
71,520
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|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 40A 8TSON-ADV | U-MOSVIII | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 35W (Tc) | N-Channel | 30V | 40A (Ta) | 2.5 mOhm @ 20A, 10V | 2.3V @ 500µA | 40nC @ 10V | 2230pF @ 15V | 4.5V, 10V | ±20V | ||
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12,300
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|
Diodes Incorporated | MOSFET P-CH 30V 8.6A POWERDI | - | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | PowerDI3333-8 | 900mW (Ta) | P-Channel | 30V | 8.6A (Ta) | 17 mOhm @ 10A, 10V | 2.1V @ 250µA | 47nC @ 10V | 2230pF @ 15V | 4.5V, 10V | ±20V | |||
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65,520
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|
Infineon Technologies | MOSFET N-CH 30V 40A TDSON-8 | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.8W (Ta), 60W (Tc) | N-Channel | 30V | 14.6A (Ta), 40A (Tc) | 7.9 mOhm @ 40A, 10V | 2V @ 30µA | 17nC @ 5V | 2230pF @ 15V | 4.5V, 10V | ±20V | |||
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46,700
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 45A 8-TSON | U-MOSVIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | 30V | 45A (Tc) | 2.2 mOhm @ 22.5A, 10V | 2.3V @ 500µA | 34nC @ 10V | 2230pF @ 15V | 10V | ±20V | |||
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55,480
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|
Vishay Siliconix | MOSFET P-CH 30V 35A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 4.2W (Ta), 35.7W (Tc) | P-Channel | 30V | 35A (Tc) | 10 mOhm @ 16.1A, 10V | 2.8V @ 250µA | 71nC @ 10V | 2230pF @ 15V | 4.5V, 10V | ±20V | |||
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37,680
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|
Diodes Incorporated | MOSFET P-CH 30V 8.6A PWRDI3333-8 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | PowerDI3333-8 | 900mW (Ta) | P-Channel | 30V | 8.6A (Ta) | 17 mOhm @ 10A, 10V | 2.1V @ 250µA | 47nC @ 10V | 2230pF @ 15V | 4.5V, 10V | ±20V | |||
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20,200
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|
Diodes Incorporated | MOSFET P-CH 30V 8.6A PWRDI3333-8 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | PowerDI3333-8 | 900mW (Ta) | P-Channel | 30V | 8.6A (Ta) | 17 mOhm @ 10A, 10V | 2.1V @ 250µA | 47nC @ 10V | 2230pF @ 15V | 4.5V, 10V | ±20V |
