5 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PSMN3R3-80BS,118
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RFQ
13,080
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Nexperia USA Inc. MOSFET N-CH 80V 120A D2PAK - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 306W (Tc) N-Channel 80V 120A (Tc) 3.5 mOhm @ 25A, 10V 4V @ 1mA 111nC @ 10V 8161pF @ 40V 10V ±20V
PSMN3R3-80BS,118
Per Unit
$1.34
RFQ
28,940
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Nexperia USA Inc. MOSFET N-CH 80V 120A D2PAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 306W (Tc) N-Channel 80V 120A (Tc) 3.5 mOhm @ 25A, 10V 4V @ 1mA 111nC @ 10V 8161pF @ 40V 10V ±20V
PSMN3R3-80BS,118
Per Unit
$0.66
RFQ
22,960
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Nexperia USA Inc. MOSFET N-CH 80V 120A D2PAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 306W (Tc) N-Channel 80V 120A (Tc) 3.5 mOhm @ 25A, 10V 4V @ 1mA 111nC @ 10V 8161pF @ 40V 10V ±20V
PSMN4R3-80ES,127
Per Unit
$1.73
RFQ
47,320
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Nexperia USA Inc. MOSFET N-CH 80V 120A I2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 306W (Tc) N-Channel 80V 120A (Tc) 4.3 mOhm @ 25A, 10V 4V @ 1mA 111nC @ 10V 8161pF @ 40V 10V ±20V
PSMN4R3-80PS,127
Per Unit
$1.63
RFQ
37,420
One step to sell excess stocks.Or submit Qty to get quotes
Nexperia USA Inc. MOSFET N-CH 80V 120A TO220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 306W (Tc) N-Channel 80V 120A (Tc) 4.3 mOhm @ 25A, 10V 4V @ 1mA 111nC @ 10V 8161pF @ 40V 10V ±20V
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