- Manufacture :
- Packaging :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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21,040
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|
Taiwan Semiconductor Corporation | MOSFET P-CHANNEL 20V 2.8A SOT23 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 900mW (Ta) | P-Channel | 20V | 2.8A (Tc) | 100 mOhm @ 2.8A, 4.5V | 950mV @ 250µA | 4.5nC @ 4.5V | 415pF @ 6V | 1.8V, 4.5V | ±8V | ||
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14,700
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|
Taiwan Semiconductor Corporation | MOSFET P-CHANNEL 20V 2.8A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 900mW (Ta) | P-Channel | 20V | 2.8A (Tc) | 100 mOhm @ 2.8A, 4.5V | 950mV @ 250µA | 4.5nC @ 4.5V | 415pF @ 6V | 1.8V, 4.5V | ±8V | |||
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75,060
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|
Taiwan Semiconductor Corporation | MOSFET P-CHANNEL 20V 2.8A SOT23 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 900mW (Ta) | P-Channel | 20V | 2.8A (Tc) | 100 mOhm @ 2.8A, 4.5V | 950mV @ 250µA | 4.5nC @ 4.5V | 415pF @ 6V | 1.8V, 4.5V | ±8V | |||
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GET PRICE |
55,340
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|
Nexperia USA Inc. | MOSFET P-CH 12V WLCSP | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-XFBGA, WLCSP | 4-WLCSP (2x2) | 400mW (Ta), 12.5W (Tc) | P-Channel | 12V | 3.9A (Ta) | 65 mOhm @ 3A, 4.5V | 900mV @ 250µA | 10nC @ 4.5V | 415pF @ 6V | 1.8V, 4.5V | ±8V | ||
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16,560
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|
Nexperia USA Inc. | MOSFET P-CH 12V WLCSP | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-XFBGA, WLCSP | 4-WLCSP (2x2) | 400mW (Ta), 12.5W (Tc) | P-Channel | 12V | 3.9A (Ta) | 65 mOhm @ 3A, 4.5V | 900mV @ 250µA | 10nC @ 4.5V | 415pF @ 6V | 1.8V, 4.5V | ±8V | |||
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71,980
One step to sell excess stocks.Or submit Qty to get quotes
|
Nexperia USA Inc. | MOSFET P-CH 12V WLCSP | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-XFBGA, WLCSP | 4-WLCSP (2x2) | 400mW (Ta), 12.5W (Tc) | P-Channel | 12V | 3.9A (Ta) | 65 mOhm @ 3A, 4.5V | 900mV @ 250µA | 10nC @ 4.5V | 415pF @ 6V | 1.8V, 4.5V | ±8V |
