8 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRF9393PBF
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RFQ
37,360
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Infineon Technologies MOSFET P-CH 30V 9.2A 8-SO HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 9.2A (Ta) 13.3 mOhm @ 9.2A, 20V 2.4V @ 25µA 38nC @ 10V 1110pF @ 25V 10V, 20V ±25V
IRF9333PBF
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RFQ
18,840
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Infineon Technologies MOSFET P-CH 30V 9.2A 8-SO HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 9.2A (Ta) 19.4 mOhm @ 9.2A, 10V 2.4V @ 25µA 38nC @ 10V 1110pF @ 25V 4.5V, 10V ±20V
IRF9333TRPBF
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RFQ
56,940
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Infineon Technologies MOSFET P-CH 30V 9.2A 8-SOIC HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 9.2A (Ta) 19.4 mOhm @ 9.2A, 10V 2.4V @ 25µA 38nC @ 10V 1110pF @ 25V 4.5V, 10V ±20V
IRF9333TRPBF
Per Unit
$0.44
RFQ
43,920
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Infineon Technologies MOSFET P-CH 30V 9.2A 8-SOIC HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 9.2A (Ta) 19.4 mOhm @ 9.2A, 10V 2.4V @ 25µA 38nC @ 10V 1110pF @ 25V 4.5V, 10V ±20V
IRF9333TRPBF
Per Unit
$0.15
RFQ
74,460
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Infineon Technologies MOSFET P-CH 30V 9.2A 8-SOIC HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 9.2A (Ta) 19.4 mOhm @ 9.2A, 10V 2.4V @ 25µA 38nC @ 10V 1110pF @ 25V 4.5V, 10V ±20V
IRF9393TRPBF
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RFQ
74,240
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Infineon Technologies MOSFET P-CH 30V 9.2A 8-SOIC HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 9.2A (Ta) 13.3 mOhm @ 9.2A, 20V 2.4V @ 25µA 38nC @ 10V 1110pF @ 25V 10V, 20V ±25V
IRF9393TRPBF
Per Unit
$0.37
RFQ
48,060
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Infineon Technologies MOSFET P-CH 30V 9.2A 8-SOIC HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 9.2A (Ta) 13.3 mOhm @ 9.2A, 20V 2.4V @ 25µA 38nC @ 10V 1110pF @ 25V 10V, 20V ±25V
IRF9393TRPBF
Per Unit
$0.11
RFQ
55,460
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Infineon Technologies MOSFET P-CH 30V 9.2A 8-SOIC HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 9.2A (Ta) 13.3 mOhm @ 9.2A, 20V 2.4V @ 25µA 38nC @ 10V 1110pF @ 25V 10V, 20V ±25V
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