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IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FDP61N20
Per Unit
$1.71
RFQ
37,940
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ON Semiconductor MOSFET N-CH 200V 61A TO-220 UniFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 417W (Tc) N-Channel - 200V 61A (Tc) 41 mOhm @ 30.5A, 10V 5V @ 250µA 75nC @ 10V 3380pF @ 25V 10V ±30V
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