4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SIHA21N65EF-E3
Per Unit
$2.70
RFQ
44,920
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 650V 21A TO-220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 35W (Tc) N-Channel 650V 21A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 106nC @ 10V 2322pF @ 100V 10V ±30V
SIHG21N65EF-GE3
Per Unit
$3.10
RFQ
57,220
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 650V 21A TO-247AC - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 208W (Tc) N-Channel 650V 21A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 106nC @ 10V 2322pF @ 100V 10V ±30V
SIHB21N65EF-GE3
Per Unit
$2.94
RFQ
31,380
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 650V 21A D2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263) 208W (Tc) N-Channel 650V 21A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 106nC @ 10V 2322pF @ 100V 10V ±30V
SIHP21N65EF-GE3
Per Unit
$2.56
RFQ
35,260
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 650V 21A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 208W (Tc) N-Channel 650V 21A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 106nC @ 10V 2322pF @ 100V 10V ±20V
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