4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STE180NE10
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RFQ
19,820
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STMicroelectronics MOSFET N-CH 100V 180A ISOTOP STripFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount ISOTOP ISOTOP® 360W (Tc) N-Channel - 100V 180A (Tc) 6 Ohm @ 40A, 10V 4V @ 250µA 795nC @ 10V 21000pF @ 25V 10V ±20V
IXFN32N120P
Per Unit
$25.88
RFQ
59,320
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IXYS MOSFET N-CH 1200V 32A SOT-227B Polar™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 1000W (Tc) N-Channel - 1200V 32A (Tc) 310 mOhm @ 500mA, 10V 6.5V @ 1mA 360nC @ 10V 21000pF @ 25V 10V ±30V
IXFL32N120P
Per Unit
$20.60
RFQ
53,400
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IXYS MOSFET N-CH 1200V 24A I5-PAK HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUSi5-Pak™ ISOPLUSi5-Pak™ 520W (Tc) N-Channel - 1200V 24A (Tc) 340 mOhm @ 16A, 10V 6.5V @ 1mA 360nC @ 10V 21000pF @ 25V 10V ±30V
IXFN150N65X2
Per Unit
$19.75
RFQ
39,580
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IXYS MOSFET N-CH 650V 145A SOT-227 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 1040W (Tc) N-Channel - 650V 145A (Tc) 17 mOhm @ 75A, 10V 5V @ 8mA 355nC @ 10V 21000pF @ 25V 10V ±30V
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