- Packaging :
- Operating Temperature :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
72,320
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|
Renesas Electronics America | MOSFET N-CH 900V 3A TO-3P | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 80W (Tc) | N-Channel | - | 900V | 3A (Ta) | 7 Ohm @ 1.5A, 10V | - | - | 425pF @ 10V | 10V | ±30V | ||
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40,180
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|
Vishay Siliconix | MOSFET P-CH 20V 3.9A TO236 | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TA) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236 (SOT-23) | 3W (Tc) | P-Channel | - | 20V | 3.9A (Tc) | 120 mOhm @ 2.8A, 4.5V | 1.5V @ 250µA | 8nC @ 4.5V | 425pF @ 10V | 2.5V, 4.5V | ±8V | |||
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15,340
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|
Vishay Siliconix | MOSFET P-CH 20V 3.9A TO236 | Automotive, AEC-Q101, TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TA) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236 (SOT-23) | 3W (Tc) | P-Channel | - | 20V | 3.9A (Tc) | 120 mOhm @ 2.8A, 4.5V | 1.5V @ 250µA | 8nC @ 4.5V | 425pF @ 10V | 2.5V, 4.5V | ±8V | |||
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51,720
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|
STMicroelectronics | N-CHANNEL 800 V, 0.75 OHM TYP., | MDmesh™ K5 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 110W (Tc) | N-Channel | - | 900V | 7A (Tc) | 810 mOhm @ 4A, 10V | 5V @ 100µA | 17.7nC @ 10V | 425pF @ 10V | 10V | ±30V |
