Supplier Device Package :
Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FDPF12N50NZT
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RFQ
31,780
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 500V 11.5A TO-220F UniFET-II™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 42W (Tc) N-Channel - 500V 11.5A (Tc) 520 mOhm @ 5.75A, 10V 5V @ 250µA 30nC @ 400V 1235pF @ 25V 10V ±25V
FDP12N50NZ
Per Unit
$1.18
RFQ
34,200
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 500V 11.5A TO-220 UniFET-II™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 170W (Tc) N-Channel - 500V 11.5A (Tc) 520 mOhm @ 5.75A, 10V 5V @ 250µA 30nC @ 10V 1235pF @ 25V 10V ±25V
FDPF12N50NZ
Per Unit
$1.23
RFQ
49,680
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 500V TO-220FP UniFET-II™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 42W (Tc) N-Channel - 500V 11.5A (Tc) 520 mOhm @ 5.75A, 10V 5V @ 250µA 30nC @ 10V 1235pF @ 25V 10V ±25V
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