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- Package / Case :
- Supplier Device Package :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
51,980
One step to sell excess stocks.Or submit Qty to get quotes
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Microsemi Corporation | MOSFET N-CH 800V 19A D3PAK | POWER MOS 8™ | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D3Pak | 500W (Tc) | N-Channel | - | 800V | 19A (Tc) | 530 mOhm @ 9A, 10V | 5V @ 1mA | 120nC @ 10V | 3760pF @ 25V | 10V | ±30V | ||
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74,300
One step to sell excess stocks.Or submit Qty to get quotes
|
Microsemi Corporation | MOSFET N-CH 800V 19A TO-247 | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 500W (Tc) | N-Channel | - | 800V | 19A (Tc) | 530 mOhm @ 9A, 10V | 5V @ 1mA | 120nC @ 10V | 3760pF @ 25V | 10V | ±30V |
