4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SIE806DF-T1-GE3
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RFQ
25,760
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Vishay Siliconix MOSFET N-CH 30V 60A POLARPAK TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (L) 5.2W (Ta), 125W (Tc) N-Channel - 30V 60A (Tc) 1.7 mOhm @ 25A, 10V 2V @ 250µA 250nC @ 10V 13000pF @ 15V 4.5V, 10V ±12V
SIE806DF-T1-E3
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RFQ
76,360
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Vishay Siliconix MOSFET N-CH 30V 60A 10-POLARPAK TrenchFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (L) 5.2W (Ta), 125W (Tc) N-Channel - 30V 60A (Tc) 1.7 mOhm @ 25A, 10V 2V @ 250µA 250nC @ 10V 13000pF @ 15V 4.5V, 10V ±12V
SIE806DF-T1-E3
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RFQ
45,640
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Vishay Siliconix MOSFET N-CH 30V 60A 10-POLARPAK TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (L) 5.2W (Ta), 125W (Tc) N-Channel - 30V 60A (Tc) 1.7 mOhm @ 25A, 10V 2V @ 250µA 250nC @ 10V 13000pF @ 15V 4.5V, 10V ±12V
SIE806DF-T1-E3
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RFQ
69,760
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 30V 60A 10-POLARPAK TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (L) 5.2W (Ta), 125W (Tc) N-Channel - 30V 60A (Tc) 1.7 mOhm @ 25A, 10V 2V @ 250µA 250nC @ 10V 13000pF @ 15V 4.5V, 10V ±12V
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