1 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PHM18NQ15T,518
GET PRICE
RFQ
51,380
One step to sell excess stocks.Or submit Qty to get quotes
NXP USA Inc. MOSFET N-CH 150V 19A SOT685-1 TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VDFN Exposed Pad 8-HVSON (6x5) 62.5W (Tc) N-Channel - 150V 19A (Tc) 75 mOhm @ 12A, 10V 4V @ 1mA 26.4nC @ 10V 1150pF @ 25V 5V, 10V ±20V
Page 1 / 1